New Ångstrom-Probe:
Non-Destructive Measurement of Semiconductor Wafer Dopant Density
- Non-Destructive,
Fast Determination of Spatial Density and Density Depth Profiles of the
Dopants with Ultra-High Resolution
- Dopant
Detection by Electron Induced X-Ray Emission Using Parallax's Patented
LEXS X-Ray Spectrometer Technology
- Determination
of Ultra-Low Dopant Concentrations in Angstrom-Thin Layered Structures
and Diffusion Barrier Layers
- Highest
Boron Detection Sensitivity of any X-Ray Spectrometer with New Collimation
Optics, Optimized for Boron
- In-Situ
Dopant Analysis with Existing Cluster Tool
- Advanced
Charge Neutralisation Plasma System
SPECS Technologies Corporation
3318 Plantation Dr.
Sarasota, Florida 34231
Phone: (941) 362-4877
Fax: (941) 364-9706
support@specs.com
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