New Laser
Substrate Heater with High Power Diode Laser
The temperature is one of the most important physical parameters for the epitaxial growth of thin films. The generation of these high temperatures in UHV applications is always a compromize between the demand of the process and the available heat source for such a temperature. The individual vapour pressure of all involved materials of the heater generates under UHV conditions a mixture of partial pressures - which could generate problems with the process quality. This problem is even increasing with higher temperatures and together with the demand in the oxygen resistance of the heater material. Conventional radiation heaters are built from SURFACE in different sizes for up to 1000 °C. Substrates with 5x5 mm dimensions are heated as well as 150x150 mm. SURFACE has developed a laser heater system for substrate sizes of up to 10 mm in diameter, using the latest available diode laser technology.
Block diagram of the advanced SURFACE Laser heater system
SURFACE offers laser moduls from 50 to 250 W compact, high flexible and ready to use with all necessary components:
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Focussing optic with light fiber
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High power diode laser module with power supply
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Control unit for advanced laser processing with high speed Linux PC, with real time kernel
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Laser cooling
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