RTA System
Rapid Thermal Annealing System for a variety of applications.
RTA system for processing semiconductor wafers by thermal annealing processes in an environment from ultra-high vacuum to ambient pressure with different atmospheres like oxygen and nitrogen. Clean, simple and rugged design for compatibility with today´s semiconductor processing technologies. Several unique features guarantee excellent uniformity and process reproducibility.
The RTA System is used for rapid thermal annealing of wafers either in ultra-high vacuum (UHV) or other atmospheres like oxygen or nitrogen with a variable pressure range up to atmospheric pressure. The wafer is heated by an array of high-power quartz lamps. The complete system consists of two UHV chambers, the load-lock chamber and the process chamber. Both chambers are pumped by turbomolecular pumps and are equipped with a pressure measurement system that spans the range from 1000 mbar down to 10-9 mbar. With a magnetically coupled transfer system the wafer is transferred into the reaction chamber. Viewports allow the direct observation of the RTA process. A gas handling system can be installed to provide an exactly defined gas pressure level in the reaction chamber. During the RTA process, this atmosphere can be analyzed with a quadrupole mass spectrometer. To measure the wafer temperature, thermocouple and pyrometer are used.
Optionally, the system can be automatically operated using our process control software EMERALT, including vacuum control and process documention. As a second option, other instruments like a custom-designed magnet can be fitted to modify the process conditions or analyze the response of the sample wafer during the RTA process.
Technical Specifications:
Standard:
Heating rate 1 … 100 K/sec
Temperature range 100°C … 800°C (optional 1000°C)
Temperature uniformity ± 5%, edge excluded
Max. wafer size Up to common size
Heating station
Size Up to the wafer size
Cooling Water
Heating elements Quartz lamps
Temp. sensor Thermocouple/ Pyrometer
Pressure-range 1000 mbar … 10- 9 mbar
Options:
Sample rotation
Magnet (RTA-6M)
Magnetic field 0.2 T (adjustable)
Gap 210 mm
Others: Please ask